? 2016 ixys corporation, all rights reserved ds100759(11/16) high voltage power mosfet n-channel enhancement mode IXTL2N470 symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 4700 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 4700 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c2a i dm t c = 25 ? c, pulse width limited by t jm 8a p d t c = 25 ? c 220 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v isol 50/60hz , 1 minute 4000 v~ weight 8 g v dss = 4700v i d25 = 2a r ds(on) ?? ?? ?? ?? ?? 20 ? ? ? ? ? g = gate s = source d = drain isoplus i5-pak tm g s d isolated tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 250 ? a 3.5 6.0 v i gss v gs = ? 20v, v ds = 0v ????????????????????? 200 na i dss v ds = 3.6kv, v gs = 0v 10 ? a v ds = 4.7kv 50 a v ds = 3.6kv note 2, t j = 125 ? c 250 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 20 ? features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 4000v~ rms electrical isolation ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits ? laser and x-ray generation systems (electrically isolated tab) advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTL2N470 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 60v, i d = 0.5 ? i d25 , note 1 2.1 3.5 s c iss 6860 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 267 pf c rss 105 pf r gi integrated gate input resistance 4.0 ?? t d(on) 40 ns t r 34 ns t d(off) 123 ns t f 205 ns q g(on) 180 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5 ? i d25 34 nc q gd 83 nc r thjc 0.56 ?? c/w r thcs 0.15 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 2 a i sm repetitive, pulse width limited by t jm 8 a v sd i f = i s , v gs = 0v, note 1 3 v t rr i f = 2a, -di/dt = 100a/ s, v r = 100v 1.75 s notes: 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. 2. part must be heatsunk for high-temp idss measurement. resistive switching times v gs = 10v, v ds = 1kv, i d = 1a r g = 0 ? (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved IXTL2N470 fig. 2. output characteristics @ t j = 125oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 10203040506070 v ds - volts i d - amperes v gs = 10v 6v 5v 5.5v fig. 3. r ds(on) normalized to i d = 1a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 2a i d = 1a fig. 4. r ds(on) normalized to i d = 1a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 00.511.522.53 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 1. output characteristics @ t j = 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10203040506070 v ds - volts i d - amperes v gs = 10v 7v 6.5v 6v fig. 6. input admittance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 5. maximum drain current vs. case temperature 0.0 0.4 0.8 1.2 1.6 2.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTL2N470 fig. 7. transconductance 0 1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 1000v i d = 1a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit 1s 10ms 100ms dc fig. 12. resistive switching times vs. external gate resistance 0 50 100 150 200 250 300 012345678910 r g(ext) - ohms switching times - nanosecond s t f t r t d(off) t d(on) v ds = 1kv, v gs = 10v i d = 1a, t j = 25oc
? 2016 ixys corporation, all rights reserved ixys ref: t_2n470(h9-p640) 11-01-16 IXTL2N470 isoplus i5-pak tm (ixtl) outline 1 = gate 2 = source 3 = drain 4 = isolated r d r1 e q q1 l l1 c e1 b1 b2 e u t s a2 a 4 3 1 2 fig. 13. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - k / w
|
